http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 EMH2411R n-channel power mosfet 30v, 5a, 36.5m , dual emh8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? low on-resistance ? best suited for lib charging and discharging switch ? common-drain type ? 2.5v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 30 v gate-to-source voltage v gss 12 v drain current (dc) i d 5a drain current (pulse) i dp pw 10 s, duty cycle 1% 60 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 1.3 w total dissipation p t when mounted on ceramic substrate (900mm 2 0.8mm) 1.4 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7045-006 ordering number : ena1421a product & package information ? package : emh8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 8765 1234 tl 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain 6 : drain 7 : drain 8 : drain emh8 1 4 85 0.125 0.2 0.2 2.1 1.7 0.5 2.0 0.2 0.75 0.05 ll lot no. EMH2411R-tl-h 62712 tkim/52709pe ms im tc-00001977 no. a1421-1/7
electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds = 3 0v, v gs =0v 1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.5 1.3 v forward transfer admittance | yfs | v ds =10v, i d = 3 a 35 s static drain-to-source on-state resistance r ds (on)1 i d =2.5a, v gs =4.5v 19.5 28 36.5 m r ds (on)2 i d =2.5a, v gs =4v 20 29 38 m r ds (on)3 i d =1a, v gs =3.7v 21 30 39 m r ds (on)4 i d =1a, v gs =3.1v 21 33 46.5 m r ds (on)5 i d =1a, v gs =2.5v 22.5 38 54 m turn-on delay time t d (on) see speci ed test circuit. 300 ns rise time t r 840 ns turn-off delay time t d (off) 3200 ns fall time t f 1650 ns total gate charge qg v ds =10v, v gs =4.5v, i d =5a 5.9 nc gate-to-source charge qgs 1nc gate-to-drain ?miller? charge qgd 1.2 nc diode forward voltage v sd i s =5a, v gs =0v 0.8 1.2 v switching time test circuit ordering information device package shipping memo EMH2411R-tl-h emh8 3,000pcs./reel pb free and halogen free p. g 50 g s d i d =3a r l =3.33 v dd =10v v out EMH2411R v in 4.5v 0v v in rg=2k rg pw=10 s d.c. 1% EMH2411R no. a1421-2/7
EMH2411R no. a1421-3/7 gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a i s -- v sd source current, i s -- a diode forward voltage, v sd -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v 0 0.2 0.4 1.0 0.8 0.6 0.1 0.3 0.9 0.7 0.5 0.001 0.01 0.1 1.0 2 10 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 --50 0 50 100 150 200 0 10 30 20 50 70 60 40 v gs =2.5v, i d =1.0a v gs =4.5v, i d =2.5a v gs =3.7v, i d =1.0a v gs =4.0v, i d =2.5a v gs =3.1v, i d =1.0a it14425 0 1.5 0.5 1.0 2.0 0 0 it14423 it14424 0.1 0.4 0.2 0.6 0.5 0.3 0.8 0.7 0.9 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 4 2 5 3 v ds =10v --25 c ta=75 c v gs =1.0v 1.5v 25 c ta=25 c it14426 it14427 it14428 ta= --25 c 75 c 25 c v ds =10v --25 c 25 c ta=75 c v gs =0v 3.1v 2.5v 3.7v 4.5v 10.0v 4.0v 1000 10000 100 7 5 3 2 7 5 3 2 0.1 2 1.0 357 it14429 v dd =10v v gs =4.5v t d (off) t r t f 10 23 57 t d (on) i d =1.0a 2.5a 01234567 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 it14430 v ds =10v i d =5a 01 56 4 3 2710 89 0 10 20 30 50 40 100 90 80 70 60 0.1 2 2 1.0 7 7 5 3 10 7 5 3 0.1 2 0.01 57 23 1.0 2 57 3 10 57 3
EMH2411R no. a1421-4/7 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w a s o drain-to-source voltage, v ds -- v drain current, i d -- a operation in this area is limited by r ds (on). dc operation ( ta=25 c ) 100 s 1ms 10ms 100ms it14432 it14431 2 3 5 7 2 0.1 3 5 7 2 1.0 3 2 2 3 5 5 7 7 10 100 0.01 0.1 0.01 57 23 2 57 23 3 2 57 3 1.0 10 5 0 0 20 40 0.4 0.6 60 80 100 120 140 160 1.0 1.4 1.3 0.2 0.8 1.2 1.6 i dp =60a i d =5a pw 10 s 1unit total dissipation when mounted on ceramic substrate (900mm 2 0.8mm) ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) 1unit
embossed taping speci cation EMH2411R-tl-h EMH2411R no. a1421-5/7
outline drawing land pattern example EMH2411R-tl-h mass (g) unit 0.008 * for reference mm unit: mm 0.4 0.3 0.5 1.9 EMH2411R no. a1421-6/7
note on usage : since the EMH2411R is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. EMH2411R ps no. a1421-7/7
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